Formation of SiC-surface layer by ion implantation

Journal of Applied Physics

Volumn 86, Issue 8, 1999, Pages 4703-4705

  Theodossiu, E ^a   Baumann, H ^a   Bethge, K ^a  

^a GOETHE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000824532     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371425     Document Type: Article

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