SCOPUS 정보 검색 플랫폼

Volumn 16, Issue 11, 2001, Pages 3229-3237

Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation

(3) Liu, Amelia C Y a McCallum, J C a Wong Leung, J b

a UNIVERSITY OF MELBOURNE (Australia)

b AUSTRALIAN NATIONAL UNIVERSITY (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; ION IMPLANTATION; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

SOLID-PHASE-EPITAXY (SPE);

AMORPHOUS SILICON;

EID: 0035521983 PISSN: 08842914 EISSN: None Source Type: Journal
DOI: 10.1557/JMR.2001.0445 Document Type: Article

Times cited : (5)

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