The crystallisation of deep amorphous wells in silicon produced by ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 164-168

  Liu, A C Y ^a   McCallum, J C ^a   Wong Leung, J ^b  

^a UNIVERSITY OF MELBOURNE   (Australia)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Amorphous silicon; Ion implantation; Lateral solid phase epitaxy; Transmission electron microscopy

Indexed keywords

AMORPHIZATION; ASPECT RATIO; CRYSTALLIZATION; EPITAXIAL GROWTH; HEAT TREATMENT; ION IMPLANTATION; MASKS; TRANSMISSION ELECTRON MICROSCOPY;

LATERAL SOLID PHASE EPITAXY; VERTICAL SOLID PHASE EPITAXY;

AMORPHOUS SILICON;

EID: 0035302751     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00335-4     Document Type: Conference Paper

References (6)