High-energy ion implanters and applications take off: High-energy implantation enables better performing and more sophisticated device structures to be fabricated while simultaneously reducing process complexity and cost

Semiconductor International

Volumn 20, Issue 4, 1997, Pages 77-88

  Rubin, Leonard ^a   Morris, Wes ^b  

^a EATON CORPORATION   (United States)

^b Silicon Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUIT MANUFACTURE;

EPI REPLACEMENT; WELL FORMATION;

ION IMPLANTATION;

EID: 0031122013     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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