Chemical composition, morphology, and deep level electronic states of GaN (0001) (1×1) surfaces prepared by indium decapping

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2063-2066

  Young, A P ^a   Brillson, L J ^a   Naoi, Y ^b,c   Tu, C W ^b  

^a The Ohio State University   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; COMPOSITION; DESORPTION; ELECTRONIC DENSITY OF STATES; INDIUM; LOW ENERGY ELECTRON DIFFRACTION; MORPHOLOGY; SURFACE TREATMENT;

DEEP LEVEL ELECTRONIC STATES; FLASH ANNEALING; INDIUM DECAPPING; LOW ENERGY ELECTRON EXCITED NANOSCALE LUMINESCENCE SPECTROSCOPY; THERMAL DESORPTION;

GALLIUM NITRIDE;

EID: 0035519465     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1412656     Document Type: Article

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