High performances of low temperature (≤ 600°C) unhydrogenated polysilicon thin film transistors

Materials Research Society Symposium - Proceedings

Volumn 403, Issue , 1996, Pages 417-422

  Pichon, L ^a   Raoult, F ^a   Mourgues, K ^a   Bonnaud, O ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; HYDROGEN; LIQUID CRYSTAL DISPLAYS; LOW TEMPERATURE PROPERTIES; OXIDATION; PASSIVATION; PLASMA ETCHING; POLYCRYSTALLINE MATERIALS; SILICON; TEMPERATURE;

FOURMASK GATE ALUMINUM PROCESS; HYDROGEN PASSIVATION; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; THERMAL OXIDATION;

THIN FILM TRANSISTORS;

EID: 0030402549     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)