Si deposition into fine contact holes by ultrahigh-vacuum chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 7 B, 1999, Pages 4045-4046

  Nakahata, Takumi ^a   Maruno, Shigemitsu ^a   Yamakawa, Satoshi ^a   Furukawa, Taisuke ^a   Tokuda, Yasunori ^a   Satoh, Shinichi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Contact hole; Epitaxial Si; LSI; Polycrystalline Si; Selective epitaxial growth; UHV CVD

Indexed keywords

CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; LSI CIRCUITS; PHOTOLITHOGRAPHY; POLYCRYSTALLINE MATERIALS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON WAFERS; VACUUM APPLICATIONS;

DISILANE FLOW RATE; DISILANE MOLECULAR FLUX; EPITAXIAL SILICON; FACET GROWTH RATE; FINE CONTACT HOLE FILLING METHOD; GROWTH TEMPERATURE; INCUBATION TIME; POLYCRYSTALLINE SILICON; SELECTIVE EPITAXIAL GROWTH; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION;

CHEMICAL VAPOR DEPOSITION;

EID: 0033354375     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4045     Document Type: Article

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