Measurement and simulation of boron diffusion in strained Si1-xGex epitaxial layers with a linearly graded germanium profile

Solid-State Electronics

Volumn 45, Issue 11, 2001, Pages 1879-1884

  Rajendran, K ^a   Schoenmaker, W ^a  

^a IMEC   (Belgium)

Author keywords

Boron; Diffusion; Modeling; SiGe; Strain

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; DIFFUSION; ELECTRON TRAPS; HETEROJUNCTIONS; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

EPITAXIAL LAYERS;

SEMICONDUCTING BORON;

EID: 0035501513     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00227-1     Document Type: Article

References (19)

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