Measurement and simulation of Boron diffusion in strained Si1-xGex epitaxial layers

IEEE Transactions on Electron Devices

Volumn 48, Issue 9, 2001, Pages 2022-2031

  Rajendran, Krishnasamy ^a   Schoenmaker, Wim ^b   Decoutere, Stefaan ^b   Loo, Roger ^b   Caymax, Matty ^b   Vandervorst, W ^b  

^a IBM   (United States)

^b IMEC   (Belgium)

Author keywords

Boron; Calibration; Diffusion process; Epitaxial layers; Heterojunction bipolar transistors; Modeling; Silicon germanium; Simulation

Indexed keywords

BAND STRUCTURE; BORON; CARRIER CONCENTRATION; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ELECTRON TRAPS; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE MODELS;

PHYSICAL MODEL AND EQUATION INTERFACE; SILICON GERMANIUM ALLOYS; THERMAL BUDGETS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0035446160     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.944192     Document Type: Article

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