Performance comparison analysis of GeSi and Si bipolar transistors

Electronics Letters

Volumn 32, Issue 13, 1996, Pages 1239-1241

  Neugroschel, A ^a   Sah, C T ^a   Ford, J M ^b   Steele, J ^b   Tang, R ^b   Stein, C ^b   Welch, P ^b   Watanabe, J ^b  

^a University of Florida   (United States)

^b MOTOROLA INC   (United States)

Author keywords

Bipolar transistors; Heterojunction bipolar transistors

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC VARIABLES MEASUREMENT; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON;

BASE TRANSIT TIME; CURRENT GAIN; MINORITY CARRIER TRANSPORT PARAMETERS; SILICON TRANSISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030173780     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960781     Document Type: Article

References (11)

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