Analysis on interface states of ultrathin-SiO2/Si(111)

Applied Surface Science

Volumn 159, Issue , 2000, Pages 83-88

  Hasunuma, Ryu ^a   Ando, Atsushi ^b   Miki, Kazushi ^b   Nishioka, Yasushiro ^a  

^a Texas Instruments Japan Ltd   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; SEMICONDUCTING SILICON; SILICA; ULSI CIRCUITS; VOLTAGE MEASUREMENT;

INTERFACE STATES; OXIDE FILMS;

SEMICONDUCTING FILMS;

EID: 0034205673     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00045-3     Document Type: Article

References (11)

1. Tanamoto T., Toriumi A. Jpn. J. Appl. Phys. 36:1997;1439.
2. Komeda, Namba K., Nishioka Y. J. Vac. Sci. Technol., A. 16:1998;1680.
3. Watanabe H., Fujita K., Ichikawa M. Surf. Sci. 385:1997;L952.
4. Hattori T., Fujimura M., Yagi T., Ohashi M. Appl. Surf. Sci. 123/124:1998;87.
5. Yasuda T., Ma Y., Lucovsky G. Extended abstract of Int. Conf. on Solid State Devices and Materials. 1994;847.
6. Hirose M., Morishita M., Yasaka T., Miyazaki S. J. Vac. Sci. Technol., A. 12:1994;1864.
7. Ohmi T., Matsumoto K., Nakamura K., Makihara K., Takano J., Yamamoto K. Appl. Phys. Lett. 62:1993;405.
8. Deal B.E., Mackenna E.L., Castro P.L. J. Electrochem. Soc. 116:1969;997.
9. R. Hasunuma, A. Ando, K. Miki, Y. Nishioka, Surf. Sci. Lett., submitted for publication.
10. Green M.A., King F.D., Shewchun J. Solid-State Electron. 17:1974;551.
11. Sakoda T., Matsumura M., Nishioka Y. Appl. Surf. Sci. 117/118:1997;241.