Channel-width dependence of floating body effects in STI- and LOCOS-isolated MOSFETS

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 483-488

  Pretet, J ^a,c   Subba, N ^b   Ioannou, D ^a,b   Cristoloveanu, S ^a   Maszara, W ^d   Raynaud, C ^e  

^a CNRS   (France)

^b GEORGE MASON UNIVERSITY   (United States)

^c STMICROELECTRONICS   (France)

^d ADVANCED MICRO DEVICES   (United States)

^e CEA LETI   (France)

Author keywords

Floating body effects; MOSFET; Narrow channel effects; SOI

Indexed keywords

SENSITIVITY ANALYSIS; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

FLOATING BODY EFFECTS (FBE); NARROW-CHANNEL EFFECTS (NCE);

MOSFET DEVICES;

EID: 0035498553     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00662-1     Document Type: Conference Paper

References (9)

1. Isolation techniques, parasitic sidewall conduction and narrow channel effects on SOI MOSFET's
2. Three dimensional DIBL for shallow-trench isolated MOSFET's
3. +-poly PMOS devices
4. Characterization of carrier generation in enhancement-mode SOI MOSFET's
5. Total dose radiation hard 0.35-μm SOI CMOS technology
6. Narrow device issues in deep-submicron technologies the influence of stress, TED and segregation on device performance
7. Analysis and control of floating-body bipolar effects in FD submicrometer SOI MOSFET's
8. Narrow-channel effects in LOCOS-Isolated SOI MOSFETs with variable thickness