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Journal of the Ceramic Society of Japan

Volumn 109, Issue 1274, 2001, Pages 858-862

Growth conditions and morphology of GaN single crystals fabricated by the Na flux method

(5) Aoki, Masato a Yamane, Hisanori a Shimada, Masahiko a Sarayama, Seiji b Disalvo, Francis J c

a TOHOKU UNIVERSITY (Japan)

b RICOH COMPANY LTD (Japan)

c Department of Obstetrics Gynecology (United States)

Author keywords

Crystal morphology; GaN; Growth condition; Na flux; Single crystal

Indexed keywords

CRYSTAL GROWTH; GALLIUM NITRIDE; INTERMETALLICS; MORPHOLOGY; SYNTHESIS (CHEMICAL);

HEXAGONAL PLATELET CRYSTALS;

SINGLE CRYSTALS;

EID: 0035483910 PISSN: 09145400 EISSN: None Source Type: Journal
DOI: 10.2109/jcersj.109.1274_858 Document Type: Article

Times cited : (13)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.