Low damage and selective gate recess RIE etching of InAlAs/InGaAs HEMTs using fluorine and chlorine gas mixtures

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 179-182

  Lai, L S ^a   Kao, H C ^a   Chan, Y J ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE; FLUORINE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE PROPERTIES;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; SELECTIVE GATE RECESS ETCHING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032296583     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)