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Journal of Non-Crystalline Solids
Volumn 291, Issue 3, 2001, Pages 181-186
Electron field emission properties of as-deposited and nitrogen implanted tetrahedral amorphous carbon films
(4)
Zhao, J P
a,b
Chen, Z Y
a
Wang, X
a
Shi, T S
a
a
SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY
(
China
)
b
AIST Shikoku
(
Japan
)
Author keywords
[No Author keywords available]
Indexed keywords
CARBON; DEGRADATION; ELECTRIC FIELD EFFECTS; ELECTRON EMISSION; FILM GROWTH; ION IMPLANTATION; NITROGEN; THERMAL EFFECTS;
FILTERED ARC DEPOSITION (FAD); TETRAHEDRAL AMORPHOUS CARBON (TA-C) FILMS;
AMORPHOUS FILMS;
EID
:
0035478724
PISSN
:
00223093
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1016/S0022-3093(01)00810-9
Document Type
:
Article
Times cited : (
7
)
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