Peculiarities of (InxGa1-x)2Se3 single crystal oxidation

Materials Letters

Volumn 51, Issue 1, 2001, Pages 27-31

  Balitskii, O A ^a   Savchyn, V P ^a   Lupshak, P P ^a   Fiyala, Ya M ^a  

^a IVAN FRANKO NATIONAL UNIVERSITY OF LVIV   (Ukraine)

Author keywords

III VI compound; In2O3; Indium gallium selenide; Phase formation; Porous structure

Indexed keywords

ANNEALING; CATHODOLUMINESCENCE; NANOSTRUCTURED MATERIALS; OXIDATION; PORE SIZE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

POROUS STRUCTURES;

SINGLE CRYSTALS;

EID: 0035478380     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(01)00259-2     Document Type: Article

References (14)