Cathodoluminescence characterization of a compound semiconductor-native dielectric interface

Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 139-142

  Berchenko, N N ^a   Izhnin, I I ^b   Savchyn, V P ^c   Stakhira, J M ^c   Voitsekhovskii, A V ^d  

^a LVIV POLYTECHNIC NATIONAL UNIVERSITY   (Ukraine)

^b Material Science Research Institute   (Ukraine)

^c IVAN FRANKO NATIONAL UNIVERSITY OF LVIV   (Ukraine)

^d TOMSK STATE UNIVERSITY   (Russian Federation)

Author keywords

Auger electron spectroscopy; Cathodoluminescence spectroscopy; Metal oxide semiconductor; X ray photoelectron spectroscopy

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CATHODOLUMINESCENCE; MOS DEVICES; NONDESTRUCTIVE EXAMINATION; OXIDATION; PHASE INTERFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

CATHODOLUMINESCENCE SPECTROSCOPY; CHALCOGENIDES; CZOCHRALSKI METHOD;

SEMICONDUCTOR MATERIALS;

EID: 0003479264     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01813-2     Document Type: Article

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