Effects of Si, Ge and Ar ion-implantation on EL from Au/Si-rich SiO2/p-Si structure

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 183, Issue 3-4, 2001, Pages 305-310

  Chen, Y ^a   Ran, G Z ^a   Sun, Y K ^a   Wang, Y B ^a   Fu, J S ^a   Chen, Wen tai ^b   Gong, Yi yuan ^b   Wu, De Xin ^b   Ma, Z C ^c   Zong, W H ^c   Qin, G G ^a,d  

^a PEKING UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c HSRI   (China)

^d INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; MAGNETRON SPUTTERING; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SPECTRUM ANALYSIS;

ELECTROLUMINESCENCE (EL) INTENSITY;

ION IMPLANTATION;

EID: 0035478018     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00702-9     Document Type: Article

References (19)