UV stability of highest-quality plasma silicon nitride passivation of silicon solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 1996, Pages 417-420

  Lauinger, Thomas ^a   Moschner, Jens ^a   Aberle, Armin G ^a   Hezel, Rudolf ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; LOW TEMPERATURE EFFECTS; PASSIVATION; PLASMAS; SEMICONDUCTOR JUNCTIONS; SILICA; SILICON NITRIDE; SILICON WAFERS; STABILITY; SURFACE TREATMENT; SURFACES;

BIFACIAL CELLS; MICROWAVE DETECTED PHOTOCONDUCTANCE DECAY; SURFACE PASSIVATION; SURFACE RECOMBINATION;

SILICON SOLAR CELLS;

EID: 0030403411     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/pvsc.1996.564032     Document Type: Conference Paper

References (19)