Extracting the oxide capacitance using inductance-capacitance-resistance meter measurement on metal-oxide-semiconductor capacitors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 9 A, 2001, Pages 5308-5309

  Lee, W ^a   Shin, J ^a   Yang, H ^a   Hwang, H ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Capacitance; Dielectric constant; MOS capacitor; Tunneling current

Indexed keywords

CAPACITANCE MEASUREMENT; COMPUTER SIMULATION; ELECTRON TUNNELING; INDUCTANCE MEASUREMENT; LEAKAGE CURRENTS; PERMITTIVITY; PHASE TRANSITIONS; QUANTUM THEORY;

INDUCTANCE-CAPACITANCE RESISTANCE METER MEASUREMENT; OXIDE CAPACITANCE; QUANTUM MECHANICAL SIMULATION; TUNNELING CURRENT;

MOS CAPACITORS;

EID: 0035456927     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.5308     Document Type: Article

References (5)