The initial stage of InGaAs growth by MOVPE on multiatomic-stepped GaAs structures

Journal of Crystal Growth

Volumn 231, Issue 1-2, 2001, Pages 75-81

  Lee, Sangyoru ^a   Akabori, Masashi ^a   Shirahata, Takahiro ^b   Takada, Kenji ^a   Motohisa, Junichi ^a   Fukui, Takashi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

^b Air Water Inc   (Japan)

Author keywords

A1. Growth models; A1. Surface structure; A3. Metalorganic chemical vapor deposition; A3. Quantum wells; B2. Semiconducting gallium arsenide

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; MATHEMATICAL MODELS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES; SURFACE STRUCTURE;

MULTIATOMIC-STEPPED STRUCTURES;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0035452447     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01479-8     Document Type: Article

References (14)