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Volumn 170, Issue 1-4, 1997, Pages 579-584
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Formation and characterization of InGaAs strained quantum wires on GaAs multiatomic steps grown by metalorganic vapor phase epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
EPITAXIAL GROWTH;
MICROSCOPIC EXAMINATION;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WIRES;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 0030646543
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(96)00636-7 Document Type: Article |
Times cited : (19)
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References (10)
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