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Volumn 170, Issue 1-4, 1997, Pages 579-584

Formation and characterization of InGaAs strained quantum wires on GaAs multiatomic steps grown by metalorganic vapor phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MICROSCOPIC EXAMINATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES;

EID: 0030646543     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00636-7     Document Type: Article
Times cited : (19)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.