Forward characteristics of P+PN+ and P+NN+ diodes on 6H-SiC

Solid-State Electronics

Volumn 45, Issue 9, 2001, Pages 1559-1563

  Zhang, Q ^a   S Sudarshan, T ^b  

^a The Department of Mechanical Engineering   (United States)

^b NONE

Author keywords

Deep level; Forward characteristic; Ideal ohmic contact; PN junction diode; SiC

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRON TUNNELING; OHMIC CONTACTS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; TEMPERATURE DISTRIBUTION;

FORWARD CHARACTERISTICS; JUNCTION DIODES;

SEMICONDUCTOR DIODES;

EID: 0035447692     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00168-X     Document Type: Article

References (11)