Control of III-V epitaxy in a metalorganic chemical vapor deposition process: Impact of source flow control on composition and thickness

Journal of Crystal Growth

Volumn 167, Issue 1-2, 1996, Pages 8-16

  Gaffney, Monique S ^a   Reaves, Casper M ^a   Smith, Roy S ^a   Holmes, Archie L ^a   DenBaars, Steven P ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CLOSED LOOP CONTROL SYSTEMS; COMPOSITION; CONTROL SYSTEM SYNTHESIS; EPITAXIAL GROWTH; FILM GROWTH; FLOW CONTROL; FLOW MEASUREMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR SUPERLATTICES; X RAY DIFFRACTION;

ANALOG CONTROL SYSTEM; CONTROLLER PERFORMANCE; SATELLITE PEAKS; VAPOR CONCENTRATION;

SEMICONDUCTING FILMS;

EID: 0030565191     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00204-7     Document Type: Article

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