SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 100-101, Issue , 1996, Pages 647-651

Growth of high-quality ZnTe layers by MOVPE

(4) Gheyas, Syed Irfan a Hirano, Shinya a Nishio, Mitsuhiro a,b Ogawa, Hiroshi a

a SAGA UNIVERSITY (Japan)

b INSTITUTE FOR MOLECULAR SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; BAND STRUCTURE; ELECTRON EMISSION; EXCITONS; FREE ENERGY; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; THERMAL EFFECTS; TRANSPORT PROPERTIES;

FREE EXCITON EMISSION; SUBSTRATE TEMPERATURE; ZINC TELLURIDE;

EPITAXIAL GROWTH;

EID: 0030564303 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(96)00356-X Document Type: Article

Times cited : (15)

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