Effect of N-doped ZnTe layers on ZnSe/ZnTe graded superlattices

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 714-717

  Taike, A ^a   Momose, M ^a   Kawata, M ^a   Gotoh, J ^a   Mochizuki, K ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; MOLECULAR BEAM EPITAXY; NITROGEN; OHMIC CONTACTS; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES;

CONTACT STRUCTURES; MODULATION DOPING; NITROGEN CONCENTRATION; ZINC SELENIDES; ZINC TELLURIDES;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0030562388     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00645-1     Document Type: Article

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