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Volumn 159, Issue 1-4, 1996, Pages 714-717
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Effect of N-doped ZnTe layers on ZnSe/ZnTe graded superlattices
a
HITACHI LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL STRUCTURE;
CURRENT VOLTAGE CHARACTERISTICS;
DIFFUSION;
MOLECULAR BEAM EPITAXY;
NITROGEN;
OHMIC CONTACTS;
PHOTOLUMINESCENCE;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR SUPERLATTICES;
CONTACT STRUCTURES;
MODULATION DOPING;
NITROGEN CONCENTRATION;
ZINC SELENIDES;
ZINC TELLURIDES;
SEMICONDUCTING ZINC COMPOUNDS;
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EID: 0030562388
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(95)00645-1 Document Type: Article |
Times cited : (9)
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References (8)
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