Growth rate characteristics and photoluminescence properties of ZnTe in MOVPE system

Applied Surface Science

Volumn 169-170, Issue , 2001, Pages 227-230

  Nishio, Mitsuhiro ^a   Hayashida, Kazuki ^a   Guo, Qixin ^a   Ogawa, Hiroshi ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SUBSTRATES;

ZINC TELLURIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0035127153     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00656-5     Document Type: Article

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