Simulations of electric potential and field profiles in Si microstrip detectors using the guard-strip concept

IEEE Transactions on Nuclear Science

Volumn 48, Issue 4 I, 2001, Pages 977-981

  Li, Z ^a  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

Depletion voltage; Field breakdown; Guard strip; Microstrip detectors; Radiation hardness; Si detectors; Simulations

Indexed keywords

COMPUTER SIMULATION; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ETCHING; ION IMPLANTATION; MICROSTRIP DEVICES; OXIDATION; RADIATION HARDENING; SILICON; THIN FILMS;

DEPLETION VOLTAGE; FIELD BREAKDOWN; GUARD-STRIP CONCEPT; SILICON MICROSTRIP DETECTOR; THIN-FILM DEPOSITION;

PARTICLE DETECTORS;

EID: 0035428698     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.958708     Document Type: Conference Paper

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