Physical modeling of silicon microstrip detectors: influence of the electrode geometry on critical electric fields

IEEE Transactions on Nuclear Science

Volumn 47, Issue 4 PART 1, 2000, Pages 1468-1473

  Passeri, D ^a   Ciampolini, P ^a   Scorzoni, A ^a   Bilei, G M ^a  

^a UNIVERSITY OF PERUGIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

MICRO-DISCHARGES; SILICON MICROSTRIP DETECTORS;

COMPUTER AIDED DESIGN; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRODES; MICROSTRIP DEVICES; SEMICONDUCTING SILICON;

PARTICLE DETECTORS;

EID: 0034245104     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.872998     Document Type: Article

References (12)

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