Stability of a-Si:H TFTS fabricated at 150 °C

SID Conference Record of the International Display Research Conference

Volumn , Issue , 2000, Pages 419-422

  Yun, Duk Chul ^a   Kim, Eugene ^a   Choi, Jae Beom ^a   Kim, Jeong Hyun ^a  

^a LG Display Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; GATES (TRANSISTOR); HYDROGENATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; THRESHOLD VOLTAGE;

FIELD EFFECT MOBILITY;

THIN FILM TRANSISTORS;

EID: 0034589770     PISSN: 10831312     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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3. J.B. Choi, D.C. Yun, J.H. Jun, S.J. Kim and J.H. Kim, AM-LCD 2000, p.9. (2000).
4. J.B. Choi, D.C. Yun, Y.I. Park and J.H. Kim, Journal of Non-Crystalline Solids 266-269, p.1315-1319 (2000).
5. M.J. Powell, IEEE Trans, Electron. Dev. 36, 2753 (1989).
6. C. Van Berkel and M.J. Powell, Appl, Phys. Lett. 51 (4) 1094 (1987).