Pseudomorphic step-doped channels field-effect transistor (SDCFET)

Electronics Letters

Volumn 32, Issue 15, 1996, Pages 1418-1419

  Laih, L W ^a   Tsai, J H ^a   Wu, C Z ^a   Lin, K W ^a   Cheng, C C ^a   Liu, W C ^a   Lour, W S ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

Breakdown voltage; Drain saturation current; Gate voltage swing; Step doped channel; Transconductance

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL IMPURITIES; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; EPITAXIAL GROWTH; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSCONDUCTANCE;

DRAIN SATURATION CURRENT; GATE VOLTAGE SWING; STEP DOPED CHANNEL;

FIELD EFFECT TRANSISTORS;

EID: 0030192264     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960947     Document Type: Article

References (6)

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