Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing

Microelectronics Reliability

Volumn 41, Issue 8, 2001, Pages 1103-1108

  Würfl, Joachim ^a   Kurpas, Paul ^a   Brunner, Frank ^a   Mai, Michael ^a   Rudolph, Matthias ^a   Weyers, Markus ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CURRENT DENSITY; DEGRADATION; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES; THERMAL EFFECTS;

CURRENT STRESSING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035416652     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00081-6     Document Type: Article

References (14)

1. Reliability of InGaP-emitter HBTs
2. High reliablity InGaP/GaAs HBT
3. Base current investigation of the long term reliability of GaAs based HBTs
4. High performance InGaP/GaAs HBTs for mobile communications
5. III-V dry etching by CCD-controlled in situ interferometry
6. +-GaAs for self passivating HBT ledge structures
7. A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors
8. Analysis of the short-term DC-current gain variation during high current density - Low temperature stress of AlGaAs/GaAs heterojunction bipolar transistors
9. Hydrogen related burn-in in GaAs/AlGaAs HBTs and implications for reliability
10. Recombination enhanced defect reactions
11. Models for degradation of GaAs/AlGaAs HBTs under temperature and current stress
12. Heymann extraction of HBT equivalent circuit elements
13. Physics of degradation in GaAs-based heterojunction bipolar transistors
14. Hero's project as an example of European programme on RF device improvement