Negative effective mass mechanism of negative differential drift velocity and terahertz generation

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 7, Issue 4, 2001, Pages 630-640

  Gribnikov, Zinovi S ^b   Bashirov, Rustam R ^b   Mitin, Vladimir V ^a,b  

^a IEEE

^b Wayne State University   (United States)

Author keywords

Ballistic transport; Negative differential drift velocity; Quantum well device; Semiconductor superlattice; Terahertz oscillator

Indexed keywords

ELECTRIC LOADS; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; GUNN DEVICES; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

ELECTRON DISPERSION RELATION; GUNN HIGH FREQUENCY GENERATORS; NEGATIVE DIFFERENTIAL DRIFT VELOCITY; NEGATIVE EFFECTIVE MASS MECHANISM; TERAHERTZ GENERATION;

QUANTUM ELECTRONICS;

EID: 0035410143     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.974235     Document Type: Article

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