Microphotoluminescence characterization of cleaved edge overgrowth T-shaped InxGa1-xAs quantum wires

Journal of Applied Physics

Volumn 83, Issue 7, 1998, Pages 3777-3783

  Yoshita, Masahiro ^a   Akiyama, Hidefumi ^a   Someya, Takao ^b   Sakaki, Hiroyuki ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21944434449     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367148     Document Type: Article

References (17)

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14. The well thickness a and b are calibrated by comparing the PL data with calculated energy levels of QWs. The procedure will be shown in Ref. 17. Other thickness parameters are nominal values.
15. The well thickness b of the overgrowth QW in S-2 was designed as 4 nm. However, since the PL spectra did not show a distinct and spatially uniform peak from QW2 as described in Sec. III, the thickness b is not well-defined.
16. Y. Nagamune, H. Watabe, F. Sogawa, and Y. Arakawa, Appl. Phys. Lett. 67, 1535 (1995).
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