Semiconductor dynamic aperture for near-field terahertz wave imaging

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 7, Issue 4, 2001, Pages 608-614

  Chen, Q ^b   Zhang, X C ^a,b  

^a IEEE   (United States)

^b Research Rensselaer Polytechnic Institute   (United States)

Author keywords

Electrooptic sampling; Near field; Terahertz imaging; Terahertz technique

Indexed keywords

GATING BEAM INDUCED THIN PHOTOCARRIER LAYER; NEAR FIELD TERAHERTZ WAVE IMAGING; SEMICONDUCTOR DYNAMIC APERTURE; SEMICONDUCTOR WAFER; SPATIAL RESOLUTION;

IMAGING SYSTEMS; LASER PULSES; LIGHT; OPTICAL INSTRUMENT LENSES; OPTICAL PUMPING; OPTICAL RESOLVING POWER; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES; SOLID STATE LASERS;

IMAGING TECHNIQUES;

EID: 0035410141     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.974232     Document Type: Article

References (11)

1. Imaging with terahertz waves
2. T-Ray imaging
3. Near-field opticss: Microscopy, spectroscopy, and surface modification beyond the diffraction limit
4. THz near-field imaging
5. Superluminal terahertz pulses
6. Two-photo absorption induced saturation of THz radiation in ZnTe
7. Far-infrared light generation at semiconductor surface and its spectroscopic applications
8. Time-resolved reflectivity measurement of temperature distributions during swept-line electron-beam heating of silicon
9. Near-field microscope probe for far infrared time domain measurements
10. Terahertz near-field microscopy based on a collection mode detector
11. Femtosecond melting and ablation of semiconductors studied with time of flight mass spectroscopy