MBE growth of AlGaAs/GaAs heterostructure and silicon doping on GaAs(n 1 1)A (n = 1-4) substrates

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 226-231

  Ohachi, T ^a   Feng, J M ^a   Asai, K ^a   Uwani, M ^a   Tateuchi, M ^a   Vaccaro, P O ^b   Fujita, K ^b  

^a DOSHISHA UNIVERSITY   (Japan)

^b ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

ASYMMETIRC DOUBLE QUANTUM WELLS (ADQW); HIGH-INDEX ORIENTATION;

SEMICONDUCTOR GROWTH;

EID: 0032668838     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01327-X     Document Type: Article

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