Orientation effect on intersubband tunneling of quantum wells grown on high-index GaAs(n11)A (n≤4) substrates

Applied Surface Science

Volumn 159, Issue , 2000, Pages 532-539

  Feng, J M ^a,b   Asai, K ^a   Narukawa, Y ^c   Kawakami, Y ^c   Fujita, S ^c   Ohachi, T ^a  

^a DOSHISHA UNIVERSITY   (Japan)

^b GAKUSHUIN UNIVERSITY   (Japan)

^c KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL ORIENTATION; ELECTRON TUNNELING; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

ASYMMETRIC DOUBLE QUANTUM WELLS (ADQW); INTERSUBBAND TUNNELING; OPTICAL TRANSITION; TIME-RESOLVED PHOTOLUMINESCENCE (TRPL);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034207417     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00133-1     Document Type: Article

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