Raman scattering study of gaas crystalline layers grown by molecular beam epitaxy at low temperature

Journal of Applied Physics

Volumn 88, Issue 7, 2000, Pages 3948-3953

  Sano, H ^a   Suda, A ^a   Hatanaka, T ^a   Mizutani, G ^a,b   Otsuka, N ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004664989     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1290263     Document Type: Article

References (23)

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