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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 2, 1997, Pages 623-628

Near-band-edge photoluminescence of GaAs epitaxial layers grown at low temperature

(3) Abe, Hajime a Nakashima, Shin Ichi a Harima, Hiroshi a

a OSAKA UNIVERSITY (Japan)

Author keywords

Free exciton; LT GaAs; Microstructure; Photoluminescence; Reflectance; Spectral hole

Indexed keywords

FREE EXCITON ABSORPTION;

CRYSTAL MICROSTRUCTURE; ELECTRIC EXCITATION; EPITAXIAL GROWTH; EXCITONS; LIGHT ABSORPTION; LIGHT REFLECTION; PHOTOLUMINESCENCE; THERMAL EFFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031071964 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.623 Document Type: Article

Times cited : (3)

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