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Surface Science

Volumn 385, Issue 1, 1997, Pages 178-186

Atomic structure of the surface reconstructions of zincblende GaN(001)

(6) Wassermeier, M a Yamada, A a,b Yang, H a,c Brandt, O a Behrend, J a,d Ploog, K H a

a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

c INSTITUTE OF SEMICONDUCTORS (China)

d EPFL (Switzerland)

Author keywords

Gallium nitride; Low index single crystal surfaces; Molecular beam epitaxy; Scanning tunneling microscopy; Single crystal surfaces; Surface relaxation and reconstruction

Indexed keywords

COMPUTATIONAL METHODS; CRYSTAL ATOMIC STRUCTURE; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MOLECULAR STRUCTURE; MONOLAYERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SURFACE PHENOMENA;

DIMERS; GALLIUM NITRIDE; LOW INDEX SINGLE CRYSTALS; SURFACE RECONSTRUCTIONS; ZINCBLENDE;

SURFACE STRUCTURE;

EID: 0031211602 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(97)00259-8 Document Type: Article

Times cited : (19)

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