Temperature and thickness dependence of steam oxidation of AlAs in cylindrical mesa structures

IEEE Photonics Technology Letters

Volumn 13, Issue 7, 2001, Pages 687-689

  Osiński, Marek ^a,b   Svimonishvili, Tengiz ^b   Smolyakov, Gennady A ^b   Smagley, Vladimir A ^b   Maćkowiak, Paweł ^c   Nakwaski, Włodzimierz ^a,b,c  

^a IEEE   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

^c LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Oxidation; Oxide aperture; Semiconductor lasers; Semiconductor process modeling; Surface emitting lasers

Indexed keywords

CYLINDRICAL MESA STRUCTURES; DEAL-GROVE MODEL; OXIDE APERTURE; SEMICONDUCTOR PROCESS MODELING; THERMAL OXIDATION KINETICS; VERTICAL CAVITY SURFACE EMITTING LASER;

DIFFERENTIATION (CALCULUS); MATHEMATICAL MODELS; OPTICAL WAVEGUIDES; REACTION KINETICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR LASERS; TEMPERATURE; THERMOOXIDATION;

CIRCULAR WAVEGUIDES;

EID: 0035397764     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.930415     Document Type: Article

References (11)

1. Advances in selective wet oxidation of AlGaAs alloys
2. Native oxide technology for III-V optoelectronic devices
3. Kinetics of growth of AlAs oxide in selectively oxidized vertical cavity surface emitting lasers
4. Effect of cylindrical geometry on the wet thermal oxidation of AlAs
5. Kinetics of thermal oxidation of AlAs in water vapor
6. Surface energy model for the thickness dependence of the lateral oxidation of AlAs
7. Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical-cavity surface emitting laser
8. General relationship for the thermal oxidation of silicon
9. 1-xAs-GaAs depending on its structures
10. 1-xAs layers in a wet ambient
11. Self-stopping selective-oxidation process of AlAs