Silicon fusion bond interfaces resilient to wet anisotropic etchants

Journal of Micromechanics and Microengineering

Volumn 11, Issue 4, 2001, Pages 359-363

  Kohler J ^a   Strandman, C ^a   Vallin, O ^a   Hedlund, C ^a   Backlund Y ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BONDING; CRYSTAL LATTICES; INTERFACES (MATERIALS); INTERFACIAL ENERGY; MICROMACHINING; PLASMA ETCHING;

SILICON FUSION BOND INTERFACES;

SILICON WAFERS;

EID: 0035397107     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/11/4/313     Document Type: Article

References (10)

1. Silicon-to-silicon direct bonding method
2. Weibull fracture probability for silicon wafer bond evaluation
3. A new evaluation method of silicon wafer bonding interfaces and bonding strength by KOH etching
4. Bulk micromachining of silicon
5. Bonding of silicon wafers for silicon-on-insulator
6. Precise mask alignment to the crystallographic orientation of silicon wafers using wet anisotropic etching
7. Differences in anisotropic etching properties of KOH and TMAH solutions
8. Surface morphology of anisotropically etched single-crystal silicon
9. The velocity source concept
10. A Monte Carlo study of etching in the presence of a mask junction