A 49.2 GHz HEMT static frequency divider using an analog/microwave design approach

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2000, Pages 85-87

  Raghavan, G ^a   Case, M G ^a   Matloubian, M ^a   Pobanz, C W ^a   Micovic, M ^a   Hu, M ^a   Ngo, C ^a   Janke, P ^a   McCalla, K ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON MOBILITY; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUPERCONDUCTING ELECTRIC LINES; TRANSCONDUCTANCE;

POWER DISSIPATION;

FREQUENCY DIVIDING CIRCUITS;

EID: 0034443793     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)