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Journal of Electronic Materials

Volumn 30, Issue 7, 2001, Pages 802-806

Kinetics of strain relaxation in semiconductor films grown on borosilicate glass-bonded substrates

(2) Moran, P D a Kuech, T F a

a University of Wisconsin Madison (United States)

Author keywords

Compliant; Glass; Relaxation; Substrate; Viscous flow; Wafer bonding

Indexed keywords

BOROSILICATE GLASS; CRYSTAL LATTICES; EPITAXIAL GROWTH; FILM GROWTH; GLASS BONDING; HETEROJUNCTIONS; MATHEMATICAL MODELS; REACTION KINETICS; RELAXATION PROCESSES; STRAIN; SUBSTRATES; VISCOUS FLOW;

BOROSILICATE GLASS BONDED SUBSTRATES; COMPLIANT; STRAIN RELAXATION; WAFER BONDING;

SEMICONDUCTING FILMS;

EID: 0035392670 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-001-0060-9 Document Type: Article

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.