Electrical characterization of highly reliable 8 nm oxide

Journal of the Electrochemical Society

Volumn 144, Issue 2, 1997, Pages 758-764

  Ghidini, G ^a   Alessandri, M ^a   Clementi, C ^a   Drera, D ^a   Pellizzer, F ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CMOS INTEGRATED CIRCUITS; NITRIDING; OXIDES; SILICON WAFERS;

CHARGE TRAPPING; DRY OXIDE; ELECTRICAL CHARACTERIZATION; LOCAL OXIDATION OF SILICON; STEAM OXIDE;

THERMOOXIDATION;

EID: 0031079370     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837481     Document Type: Article

References (9)

1. D. Bouvet, P. A. Clivaz, and M. Dutoit, ESPRIT Project 8637 HIDICCA, Technical Report (1995).
2. A. Berman, in Proceedings of International Reliability Physics Symposium, Vol. 19, p. 204, IEE (1981).
3. J. Prendergast, J. Suehle, P. Chaparala, E. Murphy, and M. Stephenson, in Proceedings of International Reliability Physics Symposium, Vol. 33, p. 124, IEEE (1995).
4. R. S. Scott, N. A. Dumin, T. W.Hughes, D. J. Dumin, and B. T. Moore, ibid., p. 131.
5. G. Ghidini, M. Tosi, and C. Clementi, Solid-State Electronics., To be published.
6. F. J.Feigl, D. R. Young, D. J. DiMaria, S. Lai, and J. Cause, J. Appl. Phys., 52, 5665 (1981).
7. 2 Interface-Ill, H. Z. Massoud, E. H. Poindexter, and C. R. Helms, Editors, PV 96-1, p. 441, The Electrochemical Society Proceedings Series, Pennington, NJ (1996).
8. M. Baht, L. K. Han, D. Wristers, J. Yan, D. L. Kwong, and J. Fulford, Appl. Phys. Lett., 66, 1225 (1995).
9. D. J. DiMaria, E. Cartier, and D. Arnold, J. Appl. Phys., 73, 3367 (1993).