Comparative study of Schottky diode characteristics in Ni, Ta and Ni/Ta metal contact schemes on n-GaN

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 7 A, 2001, Pages

  Chen, G L ^a   Chang, F C ^a   Chuang, W C ^a   Chung, H M ^a   Shen, K C ^a   Chen, W H ^a   Lee, M C ^a   Chen, W K ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Ni Ta n GaN; Ta2O5

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; MATHEMATICAL MODELS; NICKEL; SURFACE CHEMISTRY; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY;

INTERFACIAL PROPERTIES;

SCHOTTKY BARRIER DIODES;

EID: 0035389539     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l660     Document Type: Article

References (16)