Effects of thermal annealing on Ni/Ta/n-GaN Schottky diodes

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 B, 2001, Pages

  Chen, Gin Liang ^a   Chang, Fu Chin ^a   Chung, Wang Cheng ^a   Huang, Bohr Ran ^a,b   Chen, Wen Hsiung ^a   Lee, Ming Chih ^a   Chen, Wei Kuo ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Auger electron spectroscopy; Ni Ta n GaN

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; INTERDIFFUSION (SOLIDS); RAPID THERMAL ANNEALING; SUBSTRATES; TANTALUM; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

METAL-SEMICONDUCTOR INTERDIFFUSION;

SCHOTTKY BARRIER DIODES;

EID: 0035867893     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l255     Document Type: Article

References (14)