메뉴 건너뛰기




Volumn 9, Issue 3, 2001, Pages 227-232

Development of clean technology in wafer drying processes

Author keywords

[No Author keywords available]

Indexed keywords

DRYING; ENERGY UTILIZATION; ORGANIC SOLVENTS; PROCESS ENGINEERING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

EID: 0035372620     PISSN: 09596526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0959-6526(00)00055-X     Document Type: Article
Times cited : (12)

References (13)
  • 1
    • 0028182044 scopus 로고
    • Waste generation and minimization in semiconductor industry
    • Gilles D.G., Loehr R.C. Waste generation and minimization in semiconductor industry. J. Environ. Eng. 120:1994;72-86.
    • (1994) J. Environ. Eng. , vol.120 , pp. 72-86
    • Gilles, D.G.1    Loehr, R.C.2
  • 2
    • 0031380824 scopus 로고    scopus 로고
    • Liquid-phase processing of hydrophilic features on a silicon wafer
    • Olim M. Liquid-phase processing of hydrophilic features on a silicon wafer. J. Electrochem. Soc. 144:1997;4331-4335.
    • (1997) J. Electrochem. Soc. , vol.144 , pp. 4331-4335
    • Olim, M.1
  • 3
    • 0002568059 scopus 로고    scopus 로고
    • Advanced wet and dry cleaning coming together for next generation
    • Heyns M., Meterns P., Ruzyllo J., Lee M. Advanced wet and dry cleaning coming together for next generation. Solid State Technol. 42:1998;37-47.
    • (1998) Solid State Technol. , vol.42 , pp. 37-47
    • Heyns, M.1    Meterns, P.2    Ruzyllo, J.3    Lee, M.4
  • 4
    • 0032108529 scopus 로고    scopus 로고
    • Critical drying technology for deep submicron processes
    • Wang J.K., Hu J., Purl S. Critical drying technology for deep submicron processes. Solid State Technol. 41:1998;271-276.
    • (1998) Solid State Technol. , vol.41 , pp. 271-276
    • Wang, J.K.1    Hu, J.2    Purl, S.3
  • 5
    • 0029325192 scopus 로고
    • Effects of drying methods and wettability of silicon on the formation of water marks in semiconductor processing
    • Park J., Pas M.F. Effects of drying methods and wettability of silicon on the formation of water marks in semiconductor processing. J. Electrochem. Soc. 142:1995;2028-2031.
    • (1995) J. Electrochem. Soc. , vol.142 , pp. 2028-2031
    • Park, J.1    Pas, M.F.2
  • 9
    • 0030206579 scopus 로고    scopus 로고
    • Characterization of cleaning technology for silicon surfaces by hot pure water containing little dissolved oxygen
    • Hayami Y., Szuki M., Okui Y., Ogawa H., Fujimura S. Characterization of cleaning technology for silicon surfaces by hot pure water containing little dissolved oxygen. Jap. J. Appl. Phys. 35:1996;4577-4584.
    • (1996) Jap. J. Appl. Phys. , vol.35 , pp. 4577-4584
    • Hayami, Y.1    Szuki, M.2    Okui, Y.3    Ogawa, H.4    Fujimura, S.5
  • 10
    • 0032141552 scopus 로고    scopus 로고
    • Water spots: The scrouge of wafer dryers
    • Peters L. Water spots: the scrouge of wafer dryers. Semiconductor Int. August:1998;83-90.
    • (1998) Semiconductor Int. , pp. 83-90
    • Peters, L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.