Characterization of cleaning technology for silicon surfaces by hot pure water containing little dissolved oxygen

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 8, 1996, Pages 4577-4584

  Hayami, Yuka ^a   Suzuki, Miki T ^a   Okui, Yoshiko ^a   Ogawa, Hiroki ^a   Fujimura, Shuzo ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Cleaning; Contact angle; Contamination; Dissolved oxygen; FT IR RAS; Hot water; Metallic contaminant; Native oxide

Indexed keywords

CONTACT ANGLE; DISSOLVED OXYGEN; HOT WATER; METALLIC CONTAMINANTS; NATIVE OXIDE;

CLEANING; CONTAMINATION; EXPERIMENTS; OXYGEN; SURFACE PROPERTIES; WATER;

SILICON;

EID: 0030206579     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4577     Document Type: Article

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