Integration of waveguide-type wavelength demultiplexing photodetectors by the selective intermixing of an InGaAs-InGaAsP quantum-well structure

IEEE Journal of Quantum Electronics

Volumn 37, Issue 6, 2001, Pages 824-830

  Yeo, D H ^a   Yoon, K H ^a   Kim, H R ^a   Kim, S J ^a  

^a Seoul National University   (South Korea)

Author keywords

Dielectric cap annealing; Dual wavelength photodetector; InGaAs InGaAsP multiquantum wells; Integrated optics; Quantum well intermixing; Waveguide photodetector; Wavelength demultiplexing

Indexed keywords

DIELECTRIC MATERIALS; INTEGRATED OPTICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCURRENTS; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SILICA; WAVEGUIDES;

DIELECTRIC CAP ANNEALING; SELECTIVE INTERMIXING; WAVEGUIDE TYPE WAVELENGTH DEMULTIPLEXING PHOTODETECTOR;

PHOTODETECTORS;

EID: 0035371017     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.922781     Document Type: Article

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